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Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing

Chaewon Youn, Sungjun Kim. Improved synaptic properties of HfSiOx-based ferroelectric memristors by optimizing Ti/N ratio in TiN top electrode for neuromorphic computing. Science in China Series F: Information Sciences, 68(10), 2025. [doi]

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