Zhiqiang Yu, Xu Han, Jiamin Xu, Cheng Chen, Xinru Qu, Baosheng Liu, Zijun Sun, Tangyou Sun. The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO2/FTO Memory Device. Sensors, 23(7):3480, April 2023. [doi]
Abstract is missing.