Haiyang Yu, C. R. Kao. Formation Mechanism of high Ni content (Cu, Ni)6Sn5 in Cu/Sn/Ni microbump for solid state aging. In 2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022. pages 20-21, IEEE, 2022. [doi]
@inproceedings{YuK22-5,
title = {Formation Mechanism of high Ni content (Cu, Ni)6Sn5 in Cu/Sn/Ni microbump for solid state aging},
author = {Haiyang Yu and C. R. Kao},
year = {2022},
doi = {10.1109/ICTA56932.2022.9962977},
url = {https://doi.org/10.1109/ICTA56932.2022.9962977},
researchr = {https://researchr.org/publication/YuK22-5},
cites = {0},
citedby = {0},
pages = {20-21},
booktitle = {2022 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2022, Xi'an, China, October 28-30, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9269-0},
}