A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology - researchr publication authors

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Qiang Yu, Derek Thomson, Han Wui Then, Alvaro Latorre-Rey, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Said Rami. A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si Technology. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. pages 144-147, IEEE, 2022. [doi]

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