Table of Contents

• SiGe HBTs for Power Amplifiers in Front-End of Radio Communication SystemsAlvin J. Joseph, Vibhor Jain, John J. Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu. 1-6 [doi]
• Thermal impedance of SiGe HBTs: Characterization and modelingXiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter. 1-4 [doi]
• Device modeling tools and their application to SiGe HBT developmentMichael Schröter, Markus Müller, Mario Krattenmacher. 1-8 [doi]
• Maximizing Energy Efficiency in Sub-THz Radio Communication and Prospective toward 6GKenichi Okada. 1-4 [doi]
• High-Performance CMOS TIA for Data Center Optical InterconnectsKadaba R. Lakshmikumar, Alexander Kurylak, Romesh Kumar Nandwana, Bibhu Das, Joe Pampanin, Vito Boccuzzi, Pavan Kumar Hanumolu. 9-16 [doi]
• Innovative RF Device Technologies for Advanced Information and Communications Network SocietyKozo Makiyama, Shigeki Yoshida, Ken Nakata, Yasuyuki Miyamoto. 17-20 [doi]
• MVSG GaN-HEMT Model: Approach to Simulate Fringing Field Capacitances, Gate Current De-biasing, and Charge Trapping EffectsRyan Fang, Dylan Ma, Ujwal Radhakrishna, Lan Wei. 21-24 [doi]
• Neural Network-based Methods for Microwave Active Device ModelingJinyuan Cui, Qi-Jun Zhang. 25-28 [doi]
• Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTsIvan Berdalovic, Mirko Poljak, Tomislav Suligoj. 29-32 [doi]
• Significance of Equivalent Channel Temperature in Compact Modeling of GaN HEMTsSruthi M. P, Nidhin Kurian Kalarickal, Ajay Shanbhag, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta. 33-36 [doi]
• + Gates of an Ion-Trapped Quantum ComputerPeter Toth, Lasse Cordes, Vadim Issakov. 37-40 [doi]
• A 5-GHz Injection-Locked Delay Cell with 10-25 ns Adjustable Group-Delay in a 130-nm SiGe BiCMOS TechnologyA. S. Nazhad, A. Alizadeh, Milad Frounchi, John D. Cressler, B. Bakkaloglu, S. Kiaei. 41-44 [doi]
• A Multiple Input and Gain Adjustable Phase Detector in 130 nm SiGe BiCMOS TechnologyRabia Fatima Riaz, Manu Viswambharan Thayyil, Jens Wagner, Lucas Wetzel, Dimitrios A. Prousalis, Frank Ellinger. 45-48 [doi]
• A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS TechnologyFlorian Vogelsang, Christian Bredendiek, Jan Schopfel, Holger Rücker, Nils Pohl. 49-52 [doi]
• 2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding TechniquesEverett O'Malley, James F. Buckwalter. 53-56 [doi]
• A D-Band Transceiver with On-Chip Multi-Port Radiators and Leakage Cancellation in 45nm SOIVincent Lammert, Michael L. Leyrer, Vadim Issakov. 57-61 [doi]
• Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal LayersNelson Sepúlveda-Ramos, Jeffrey W. Teng, Harrison Lee 0002, John D. Cressler. 62-65 [doi]
• Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier CellsHarrison Lee 0002, Arya Moradinia, Jeffrey W. Teng, Nelson Sepúlveda-Ramos, John D. Cressler. 66-69 [doi]
• Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET TechnologiesGuofu Niu. 70-77 [doi]
• Extraction of Emitter Series Resistance Along With Collector and Thermal Resistances in Silicon Bipolar TransistorsFarzana Yasmin, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta. 78-81 [doi]
• Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTsSaurabh Sirohi, Beng Woon Lim, Ajay Raman, Frederick A. Anderson. 82-85 [doi]
• Capacitance Engineering of GaN HEMT Technologies with Recessed Field PlateKyle M. Bothe, Matthew R. King, Jia Guo, Yueying Liu, Saptha Sriram, Jeremy Fisher, Scott T. Sheppard, Basim Noori. 90-93 [doi]
• Performance Improvement and Layout Design Comparison of AlGaN/GaN HEMT for Ka- Q- and V-band ApplicationsKeiichi Matsushita, Chih-Yuan Chan, Ju-Hsien Lin, Sheng-Wen Peng, Hung-Kuan Lo, Yu-Syuan Lin, Cheng-Kuo Lin. 94-98 [doi]
• Ultrawide Bandgap Nitride Semiconductor Heterojunction Field Effect TransistorsWu Lu. 99-103 [doi]
• Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless NetworkShigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata. 104-107 [doi]
• Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter StructuresSara Hamzeloui, F. Ciabattini, Akshay M. Arabhavi, W. Quan, D. Marti, M. Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi. 108-111 [doi]
• InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-DriverColombo R. Bolognesi, Akshay M. Arabhavi, R. Hersent, Sara Hamzeloui, F. Jorge, X. Wen, Muriel Riet, M. Luisier, Virginie Nodjiadjim, F. Ciabattini, Colin Mismer, Olivier Ostinelli, Agnieszka Konczykowska. 112-119 [doi]
• SLCFET Amplifier Performance Improvements Using an ALD TiN T-Gate ProcessTimothy Vasen, Brian Novak, Marc Scimonelli, Kevin Frey, Mustapha Saad, Abbey Saia, Benjamin Grisafe, Ken A. Nagamatsu, Josephine Chang, Virginia Wheeler, Karl D. Hobart, Andrew D. Koehler, Patrick Shea, Stephen Van Campen, Robert S. Howell, Shamima Afroz. 120-123 [doi]
• 2 Inductorless 50 Gb/s Multiplexer for Josephson Arbitrary Waveform SynthesizersYerzhan Kudabay, Vadim Issakov. 124-127 [doi]
• High Linearity Ka-band InP HBT MMIC Amplifier with 19.8:1 IP3/Pdc LFOM at 48 GHzKevin W. Kobayashi, Paul Partyka, Tim Howle, Tony Sellas, Leonard Hayden. 128-131 [doi]
• Improved Signal Integrity at 64 Gbps in a 130-nm SiGe Optical Receiver With Through-Silicon ViasGhazal Movaghar, Junqian Liu, James Dalton, Luis A. Valenzuela, Clint L. Schow, James F. Buckwalter. 132-135 [doi]
• Lumped Ultra-Broadband Linear Driver in 130 nm SiGe SG13G3 TechnologyFestim Iseini, Andrea Malignaggi, Falk Korndörfer, Mesut Inac, Gerhard Kahmen. 136-139 [doi]
• A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB noise figure in 0.1 µm GaAs TechnologyMantas Sakalas, Paulius Sakalas. 140-143 [doi]
• A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 300mm GaN-on-Si TechnologyQiang Yu, Derek Thomson, Han Wui Then, Alvaro Latorre-Rey, Marko Radosavljevic, Michael Beumer, Pratik Koirala, Nicole Thomas, Nityan Nair, Heli Vora, Samuel Bader, Said Rami. 144-147 [doi]
• Reactively Matched 2-18 GHz Broadband GaN-on-SiC MMIC Driver AmplifierMatthew L. Speir, Michael Litchfield. 148-151 [doi]
• A 220-294 GHz Power Amplifier with 10-dBm Psat and 2.2% PAE in 250-nm InP DHBTTeruo Jyo, Hiroshi Hamada, Munehiko Nagatani, Hitoshi Wakita, Ibrahim Abdo, Miwa Mutoh, Yuta Shiratori, Kenichi Okada, Atsushi Shirane, Hiroyuki Takahashi. 152-155 [doi]
• A 29-dBm, 34% PAE E-Band Dual-Input Doherty Power Amplifier Using 40-nm GaN TechnologyToshifumi Nakatani, Mohammad Ali Zolfaghari, Jonmei J. Yan, Peter M. Asbeck. 156-159 [doi]
• Sub-100nm GaN/Si MMIC processes for 6G telecommunicationsRémy Leblanc, Peter Frijlink, Marc Rocchi. 160-165 [doi]
• A 180-220-GHz, 12.7-dBm peak Psat and 17.3% peak PAE Power Amplifier in 250-nm InP HBTJeff Shih-Chieh Chien, Wonho Lee, James F. Buckwalter. 166-169 [doi]
• Low Loss, High Linearity Switches for Wideband ApplicationsMatt Torpey, Austin Tucker. 170-173 [doi]
• The Load-Modulated Linearizer: A Technique for Intermodulation Cancellation in PA SystemsAnton N. Atanasov, Wasam R. A. Mukhtar Ahmad, Mark S. Oude Alink, Frank E. van Vliet. 174-177 [doi]
• A 0.4 THz Efficient OOK/FSK Wireless Transmitter Enabling 3 Gbps at 20 metersSam Razavian, Sidharth Thomas, Mostafa Hosseini, Aydin Babakhani. 178-181 [doi]
• A 42.5-51.0 GHz SiGe BiCMOS Integrated Tunable Bandpass Filter and AttenuatorArya Moradinia, Clifford D. Y. Cheon, Christopher T. Coen, Nelson E. Lourenco, Adilson S. Cardoso, John D. Cressler. 183-186 [doi]
• Design of 20-28 GHz GaAs Phase Shifter MMIC and Small Signal Validation using MVS-GaAs ModelPilsoon Choi, Ryan Fang, Lan Wei, Slim Boumaiza, Ujwal Radhakrishna, Eugene A. Fitzgerald. 187-190 [doi]
• A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT TechnologyUtku Soylu, Amirreza Alizadeh, Munkyo Seo, Mark J. W. Rodwell. 191-194 [doi]
• A SiGe D-Band x12 Frequency Multiplier with Gilbert Cell-Based TriplerJustin Romstadt, Ahmad Zaben, Hakan Papurcu, Klaus Aufinger, Nils Pohl. 195-198 [doi]
• Broadband 0.4-4 THz Generation in 90nm SiGe BiCMOSSidharth Thomas, Sam Razavian, Wei Sun, Anthony D. Kim, Yu Wu, Benjamin S. Williams, Aydin Babakhani. 199-202 [doi]
• A Review of Physics-based Modeling of Millimeter-Wave TransistorsSoheil Nouri, Amirreza Ghadimi Avval, Samir M. El-Ghazaly. 203-207 [doi]
• Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTsMarkus Müller, Tobias Nardmann, Maximilian Froitzheim, Michael Schröter. 208-211 [doi]
• Geometry scalable compact modeling of GaAs HBTsTobias Nardmann, Plamen Kolev, Nick Tao, Michael Schröter. 212-215 [doi]
• Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTsChristoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter. 216-223 [doi]
• Modeling Dynamic Lateral Current Crowding in SiGe HBTsSandip Ghosh, Shon Yadav, Anjan Chakravorty. 224-227 [doi]
• Recovery of Intrinsic Heterojunction Bipolar Transistors Profiles by Neural NetworksGrégoire Caron, Anatoli B. Juditsky, Nicolas Guitard, Didier Céli. 228-231 [doi]
• Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHzUppili S. Raghunathan, Saurabh Sirohi, V. Ruparelia, P. K. Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, V. Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, K. Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Q. Liu. 232-235 [doi]