Uppili S. Raghunathan, Saurabh Sirohi, V. Ruparelia, P. K. Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, V. Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, K. Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Q. Liu. Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. pages 232-235, IEEE, 2022. [doi]
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