Guofu Niu. Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies. In 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2022, Phoenix, AZ, USA, October 16-19, 2022. pages 70-77, IEEE, 2022. [doi]
Abstract is missing.