A TCAD-based Study of NDR Effect in NC-FinFET - researchr publication authors

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Hao Yu, Chengxu Wang, Xiangshui Miao, Xingsheng Wang. A TCAD-based Study of NDR Effect in NC-FinFET. In 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020. pages 102-103, IEEE, 2020. [doi]

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