Hao Yu, Chengxu Wang, Xiangshui Miao, Xingsheng Wang. A TCAD-based Study of NDR Effect in NC-FinFET. In 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020. pages 102-103, IEEE, 2020. [doi]
@inproceedings{YuWMW20,
title = {A TCAD-based Study of NDR Effect in NC-FinFET},
author = {Hao Yu and Chengxu Wang and Xiangshui Miao and Xingsheng Wang},
year = {2020},
doi = {10.1109/ICTA50426.2020.9332104},
url = {https://doi.org/10.1109/ICTA50426.2020.9332104},
researchr = {https://researchr.org/publication/YuWMW20},
cites = {0},
citedby = {0},
pages = {102-103},
booktitle = {2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020, Nanjing, China, November 23-25, 2020},
publisher = {IEEE},
isbn = {978-1-7281-8032-8},
}