High Performance 5G Mobile SOC Productization with 4nm EUV Fin-FET Technology

Jun Yuan, Jie Deng, Vicki Lin, Ying Chen, Joseph Chiu, Minghuei Lin, Jun Chen, Deedee Zhang, Yukai Chen, David Liu, Bo Yu, Hao Wang, Giri Nallapati, Vivek Mohan, Venu Sanaka, Berkan Baran, Frank Dahan, Prasad Bhadri, Rajesh Geol, Venu Boynapalli, Seyfi Bazarjani, Paul Penzes, Parag Agashe, P. R. Chidambaram. High Performance 5G Mobile SOC Productization with 4nm EUV Fin-FET Technology. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]

@inproceedings{YuanDLCCLCZCLYW23,
  title = {High Performance 5G Mobile SOC Productization with 4nm EUV Fin-FET Technology},
  author = {Jun Yuan and Jie Deng and Vicki Lin and Ying Chen and Joseph Chiu and Minghuei Lin and Jun Chen and Deedee Zhang and Yukai Chen and David Liu and Bo Yu and Hao Wang and Giri Nallapati and Vivek Mohan and Venu Sanaka and Berkan Baran and Frank Dahan and Prasad Bhadri and Rajesh Geol and Venu Boynapalli and Seyfi Bazarjani and Paul Penzes and Parag Agashe and P. R. Chidambaram},
  year = {2023},
  doi = {10.23919/VLSITechnologyandCir57934.2023.10185435},
  url = {https://doi.org/10.23919/VLSITechnologyandCir57934.2023.10185435},
  researchr = {https://researchr.org/publication/YuanDLCCLCZCLYW23},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023},
  publisher = {IEEE},
  isbn = {978-4-86348-806-9},
}