C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.. Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems, 12(10):1542-1546, 1993. [doi]
@article{YueAYT93,
title = {Improved universal MOSFET electron mobility degradation models for circuit simulation},
author = {C. Patrick Yue and Victor Martin Agostinelli Jr. and Gregory Munson Yeric and A. F. Tasch Jr.},
year = {1993},
doi = {10.1109/43.256929},
url = {http://doi.ieeecomputersociety.org/10.1109/43.256929},
tags = {C++},
researchr = {https://researchr.org/publication/YueAYT93},
cites = {0},
citedby = {0},
journal = {IEEE Trans. on CAD of Integrated Circuits and Systems},
volume = {12},
number = {10},
pages = {1542-1546},
}