A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology

Jennifer Zaini, Frédéric Hameau, Thierry Taris, Dominique Morche, Patrick Audebert, Eric Mercier. A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology. In 2017 IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017, Taipei, Taiwan, July 24-26, 2017. pages 1-6, IEEE, 2017. [doi]

@inproceedings{ZainiHTMAM17,
  title = {A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology},
  author = {Jennifer Zaini and Frédéric Hameau and Thierry Taris and Dominique Morche and Patrick Audebert and Eric Mercier},
  year = {2017},
  doi = {10.1109/ISLPED.2017.8009161},
  url = {https://doi.org/10.1109/ISLPED.2017.8009161},
  researchr = {https://researchr.org/publication/ZainiHTMAM17},
  cites = {0},
  citedby = {0},
  pages = {1-6},
  booktitle = {2017 IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2017, Taipei, Taiwan, July 24-26, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-6023-8},
}