Single- and double-heterostructure GaN-HEMTs devices for power switching applications

A. Zanandrea, Eldad Bahat-Treidel, F. Rampazzo, A. Stocco, Matteo Meneghini, Enrico Zanoni, O. Hilt, Ponky Ivo, J. Wuerfl, Gaudenzio Meneghesso. Single- and double-heterostructure GaN-HEMTs devices for power switching applications. Microelectronics Reliability, 52(9-10):2426-2430, 2012. [doi]

Abstract

Abstract is missing.