Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge

S. Zarate, Ismael Cosme, Andrey Kosarev, Svetlana Mansurova, A. Itzmoyotl, Hiram E. Martinez. Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge. In 13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016, Mexico City, Mexico, September 26-30, 2016. pages 1-4, IEEE, 2016. [doi]

@inproceedings{ZarateCKMIM16,
  title = {Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge},
  author = {S. Zarate and Ismael Cosme and Andrey Kosarev and Svetlana Mansurova and A. Itzmoyotl and Hiram E. Martinez},
  year = {2016},
  doi = {10.1109/ICEEE.2016.7751215},
  url = {http://dx.doi.org/10.1109/ICEEE.2016.7751215},
  researchr = {https://researchr.org/publication/ZarateCKMIM16},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {13th International Conference on Electrical Engineering, Computing Science and Automatic Control, CCE 2016, Mexico City, Mexico, September 26-30, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-3511-3},
}