Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH::3::/N::2::O plasma

Xiangbin Zeng, X. W. Sun, Junfeng Li, Johnny K. O. Sin. Improving reliability of poly-Si TFTs with channel layer and gate oxide passivated by NH::3::/N::2::O plasma. Microelectronics Reliability, 44(3):435-442, 2004. [doi]

Abstract

Abstract is missing.