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Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure

Kang Zhang, Yu Wu 0015, Dongqing Hu, Yunpeng Jia, Xintian Zhou. Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. In Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2023, Xiamen, China, October 20-22, 2023. pages 1601-1608, ACM, 2023. [doi]

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Kang Zhang

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Yu Wu 0015

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Dongqing Hu

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Yunpeng Jia

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Xintian Zhou

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