The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang. The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry, 11(2):154, 2019. [doi]

Authors

Jizuo Zhang

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Jianjun Chen

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Pengcheng Huang

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Shouping Li

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Liang Fang

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