The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET

Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang. The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry, 11(2):154, 2019. [doi]

Abstract

Abstract is missing.