Statistical analysis and design of 6T SRAM cell for physical unclonable function with dual application modes

Le Zhang, Chip-Hong Chang, Zhi-Hui Kong, Chao Qun Liu. Statistical analysis and design of 6T SRAM cell for physical unclonable function with dual application modes. In 2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015. pages 1410-1413, IEEE, 2015. [doi]

@inproceedings{ZhangCKL15,
  title = {Statistical analysis and design of 6T SRAM cell for physical unclonable function with dual application modes},
  author = {Le Zhang and Chip-Hong Chang and Zhi-Hui Kong and Chao Qun Liu},
  year = {2015},
  doi = {10.1109/ISCAS.2015.7168907},
  url = {http://dx.doi.org/10.1109/ISCAS.2015.7168907},
  researchr = {https://researchr.org/publication/ZhangCKL15},
  cites = {0},
  citedby = {0},
  pages = {1410-1413},
  booktitle = {2015 IEEE International Symposium on Circuits and Systems, ISCAS 2015, Lisbon, Portugal, May 24-27, 2015},
  publisher = {IEEE},
  isbn = {978-1-4799-8391-9},
}