Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking - researchr publication

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Jizuo Zhang, Liang Fang, Jianjun Chen, Shen Hou, Xianyu Tong. Single Event Transient Study of pMOS Transistors in 65 nm Technology With and Without a Deep n+ Well Under Particle Striking. IEEE Access, 7:149255-149261, 2019. [doi]

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