Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor

Jinxin Zhang, Hongxia Guo, Fengqi Zhang, Chaohui He, Pei Li, Yunyi Yan, Hui Wang, Linxia Zhang. Heavy ion micro-beam study of single-event transient (SET) in SiGe heterjunction bipolar transistor. Science in China Series F: Information Sciences, 60(12), 2017. [doi]

Abstract

Abstract is missing.