Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension

Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu 0015. Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. In Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering, EITCE 2023, Xiamen, China, October 20-22, 2023. pages 66-72, ACM, 2023. [doi]

Abstract

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