A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer - researchr publication authors

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Bin Zhang, Yan Han, Shifeng Zhang, Dazhong Zhu, Wei Zhang, Huanting Wu, Fang Liu. A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer. IEICE Electronic Express, 10(21):20130719, 2013. [doi]

This author has not been identified. Look up 'Bin Zhang' in GoogleThis author has not been identified. Look up 'Yan Han' in GoogleThis author has not been identified. Look up 'Shifeng Zhang' in GoogleThis author has not been identified. Look up 'Dazhong Zhu' in GoogleThis author has not been identified. Look up 'Wei Zhang' in GoogleThis author has not been identified. Look up 'Huanting Wu' in GoogleThis author has not been identified. Look up 'Fang Liu' in Google

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