Surge Energy Robustness of GaN Gate Injection Transistors - researchr publication authors

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Ruizhe Zhang, Joseph P. Kozak, Jingcun Liu, Ming Xiao, Yuhao Zhang. Surge Energy Robustness of GaN Gate Injection Transistors. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-7, IEEE, 2020. [doi]

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