Bin Zhang, Michael Orshansky. Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation. In 9th International Symposium on Quality of Electronic Design (ISQED 2008), 17-19 March 2008, San Jose, CA, USA. pages 774-779, IEEE Computer Society, 2008. [doi]
@inproceedings{ZhangO08:0,
title = {Modeling of NBTI-Induced PMOS Degradation under Arbitrary Dynamic Temperature Variation},
author = {Bin Zhang and Michael Orshansky},
year = {2008},
doi = {10.1109/ISQED.2008.151},
url = {http://doi.ieeecomputersociety.org/10.1109/ISQED.2008.151},
tags = {modeling},
researchr = {https://researchr.org/publication/ZhangO08%3A0},
cites = {0},
citedby = {0},
pages = {774-779},
booktitle = {9th International Symposium on Quality of Electronic Design (ISQED 2008), 17-19 March 2008, San Jose, CA, USA},
publisher = {IEEE Computer Society},
isbn = {978-0-7695-3117-5},
}