Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFET - researchr publication authors

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S. Q. Zhang, Y. S. Sun, D. Gao, H. Jiang, Z. Q. Yu, H. Zheng, J.-L. Huang. Investigation of Channel Dimension Dependence of BTI Degradation and Variation in Planar HKMG MOSFET. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-4, IEEE, 2023. [doi]

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