Shuai Zhang, Hsiao-Chin Tuan, Xiaojing Wu, Lei Shi, Jian Wu. 300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology. Microelectronics Reliability, 61:125-128, 2016. [doi]
@article{ZhangTWSW16,
title = {300-V class power n-channel LDMOS transistor implemented in 0.18-μm silicon-on-insulator (SOI) technology},
author = {Shuai Zhang and Hsiao-Chin Tuan and Xiaojing Wu and Lei Shi and Jian Wu},
year = {2016},
doi = {10.1016/j.microrel.2015.11.004},
url = {http://dx.doi.org/10.1016/j.microrel.2015.11.004},
researchr = {https://researchr.org/publication/ZhangTWSW16},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {61},
pages = {125-128},
}