Yuewei Zhang, Zhanbo Xia, Chandan Joishi, Siddharth Rajan. Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET). In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]
@inproceedings{ZhangXJR18,
title = {Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET)},
author = {Yuewei Zhang and Zhanbo Xia and Chandan Joishi and Siddharth Rajan},
year = {2018},
doi = {10.1109/DRC.2018.8444106},
url = {https://doi.org/10.1109/DRC.2018.8444106},
researchr = {https://researchr.org/publication/ZhangXJR18},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018},
publisher = {IEEE},
isbn = {978-1-5386-3028-0},
}