Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect

Lining Zhang, Jian Zhang, Yan Song, Xinnan Lin, Jin He, Mansun Chan. Charge-based model for symmetric double-gate MOSFETs with inclusion of channel doping effect. Microelectronics Reliability, 50(8):1062-1070, 2010. [doi]

Abstract

Abstract is missing.