Self-compliance and high-performance GeTe-based CBRAM with Cu electrode

Jiayi Zhao, Qin Chen, Xiaohu Zhao, Gaoqi Yang, Guokun Ma, Hao Wang. Self-compliance and high-performance GeTe-based CBRAM with Cu electrode. Microelectronics Journal, 131:105649, 2023. [doi]

@article{ZhaoCZYMW23,
  title = {Self-compliance and high-performance GeTe-based CBRAM with Cu electrode},
  author = {Jiayi Zhao and Qin Chen and Xiaohu Zhao and Gaoqi Yang and Guokun Ma and Hao Wang},
  year = {2023},
  doi = {10.1016/j.mejo.2022.105649},
  url = {https://doi.org/10.1016/j.mejo.2022.105649},
  researchr = {https://researchr.org/publication/ZhaoCZYMW23},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {131},
  pages = {105649},
}