Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy

Xiang Zheng, Shiwei Feng, Yamin Zhang, Junwei Yang. Identifying the spatial position and properties of traps in GaN HEMTs using current transient spectroscopy. Microelectronics Reliability, 63:46-51, 2016. [doi]

Abstract

Abstract is missing.