High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure

Xueqian Zhong, Li Zhang, Gang Xie, Qing Guo, Tao Wang, Kuang Sheng. High temperature physical modeling and verification of a novel 4H-SiC lateral JFET structure. Microelectronics Reliability, 53(12):1848-1856, 2013. [doi]

Abstract

Abstract is missing.