Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation - researchr publication authors

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Longda Zhou, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang. Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. In IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, CA, USA, March 26-30, 2023. pages 1-10, IEEE, 2023. [doi]

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