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Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs

Jianhua Zhou, Albert Pang, Steam Cao, Shichang Zou. Hole tunneling from valence band and hot-carrier induced hysteresis effect in 0.13 μm partially depleted silicon-on-insulator n-MOSFETs. Microelectronics Reliability, 51(12):2077-2080, 2011. [doi]

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