An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process

Mo Zhou, Yi Shan, Yemin Dong. An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process. IEICE Trans. Electron., 103-C(6):332-334, 2020. [doi]

Abstract

Abstract is missing.