Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles - researchr publication authors

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Qiaozhen Zhou, Fang Wang, Xuanyu Zhao, Kai Hu, Yujian Zhang, Xin Shan, Xin Lin, Yupeng Zhang, Ke Shan, Kailiang Zhang. Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles. Journal of Intelligent and Fuzzy Systems, 45(3):5159-5167, 2023. [doi]

This author has not been identified. Look up 'Qiaozhen Zhou' in GoogleThis author has not been identified. Look up 'Fang Wang' in GoogleThis author has not been identified. Look up 'Xuanyu Zhao' in GoogleThis author has not been identified. Look up 'Kai Hu' in GoogleThis author has not been identified. Look up 'Yujian Zhang' in GoogleThis author has not been identified. Look up 'Xin Shan' in GoogleThis author has not been identified. Look up 'Xin Lin' in GoogleThis author has not been identified. Look up 'Yupeng Zhang' in GoogleThis author has not been identified. Look up 'Ke Shan' in GoogleThis author has not been identified. Look up 'Kailiang Zhang' in Google

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