Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles

Qiaozhen Zhou, Fang Wang, Xuanyu Zhao, Kai Hu, Yujian Zhang, Xin Shan, Xin Lin, Yupeng Zhang, Ke Shan, Kailiang Zhang. Enhanced resistive switching characteries in HfOx memory devices by embedding W nanoparticles. Journal of Intelligent and Fuzzy Systems, 45(3):5159-5167, 2023. [doi]

Abstract

Abstract is missing.