Chunlin Zhu, Ian Deviny, Gary Liu, Andy Dai. Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer. In IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29 - Nov. 1, 2014. pages 1834-1839, IEEE, 2014. [doi]
@inproceedings{ZhuDLD14,
title = {Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer},
author = {Chunlin Zhu and Ian Deviny and Gary Liu and Andy Dai},
year = {2014},
doi = {10.1109/IECON.2014.7048751},
url = {https://doi.org/10.1109/IECON.2014.7048751},
researchr = {https://researchr.org/publication/ZhuDLD14},
cites = {0},
citedby = {0},
pages = {1834-1839},
booktitle = {IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29 - Nov. 1, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4032-5},
}