Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer

Chunlin Zhu, Ian Deviny, Gary Liu, Andy Dai. Study of failure mechanism in the modern IGBT with a highly doped N-buffer layer. In IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society, Dallas, TX, USA, October 29 - Nov. 1, 2014. pages 1834-1839, IEEE, 2014. [doi]

Abstract

Abstract is missing.