Hong Zhu, Volkan Kursun. Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality. In International SoC Design Conference, ISOCC 2011, Jeju, South Korea, November 17-18, 2011. pages 333-336, IEEE, 2011. [doi]
@inproceedings{ZhuK11-3,
title = {Symmetrical triple-threshold-voltage nine-transistor SRAM circuit with superior noise immunity and overall electrical quality},
author = {Hong Zhu and Volkan Kursun},
year = {2011},
doi = {10.1109/ISOCC.2011.6138778},
url = {http://dx.doi.org/10.1109/ISOCC.2011.6138778},
researchr = {https://researchr.org/publication/ZhuK11-3},
cites = {0},
citedby = {0},
pages = {333-336},
booktitle = {International SoC Design Conference, ISOCC 2011, Jeju, South Korea, November 17-18, 2011},
publisher = {IEEE},
isbn = {978-1-4577-0709-4},
}