Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices

Jing Zhu, Siyuan Yu, Yangyang Lu, Weifeng Sun, Chuanyi Cheng, Ding Yan, Yunwu Zhang, Shaohong Li, Long Zhang, Sen Zhang, Nailong He, Yan Gu. Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices. IEEE Transactions on Industrial Electronics, 68(2):1506-1514, 2021. [doi]

@article{ZhuYLSCYZLZZHG21,
  title = {Study and Implementation of 600-V High-Voltage Gate Driver IC With the Common-Mode Dual-Interlock Technique for GaN Devices},
  author = {Jing Zhu and Siyuan Yu and Yangyang Lu and Weifeng Sun and Chuanyi Cheng and Ding Yan and Yunwu Zhang and Shaohong Li and Long Zhang and Sen Zhang and Nailong He and Yan Gu},
  year = {2021},
  doi = {10.1109/TIE.2020.2970673},
  url = {https://doi.org/10.1109/TIE.2020.2970673},
  researchr = {https://researchr.org/publication/ZhuYLSCYZLZZHG21},
  cites = {0},
  citedby = {0},
  journal = {IEEE Transactions on Industrial Electronics},
  volume = {68},
  number = {2},
  pages = {1506-1514},
}