A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections

Charles Ching-Hsiang Hsu. A Study of Generation-Annealing - Charging of Oxide and Interface Traps in Metal-Oxide - Semiconductor Structure Using Tunneling and Hot Electron Injections. PhD thesis, University of Illinois Urbana-Champaign, USA, 1988. [doi]

Abstract

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