Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant

D. Alvarez, M. J. Abou-Khalil, C. Russ, Kiran V. Chatty, Robert Gauthier, D. Kontos, J. Li, C. Seguin, R. Halbach. Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. Microelectronics Reliability, 46(9-11):1597-1602, 2006. [doi]

Abstract

Abstract is missing.