Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun. Low-leakage hybrid FinFET SRAM cell with asymmetrical gate overlap / underlap bitline access transistors for enhanced read data stability. In 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013), Beijing, China, May 19-23, 2013. pages 2331-2334, IEEE, 2013. [doi]
Abstract is missing.