N. Sghaier - researchr alias

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Viewing Publication 1 - 7 from 7

2015

Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodesN. Abdelwahed, M. Troudi, N. Sghaier, Abdelkader Souifi. mr, 55(8):1169-1173, 2015. [doi]

2013

Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixelsS. Chatbouri, M. Troudi, N. Sghaier, A. Kalboussi, D. Drouin, V. Aimez, A. Souifi. IEEEssd 2013: 1-4 [doi]

2009

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulatorA. Boubaker, M. Troudi, N. Sghaier, A. Souifi, N. Baboux, A. Kalboussi. mj, 40(3):543-546, 2009. [doi]

2007

A new SIMPLORER model for single-electron transistorsA. Boubaker, N. Sghaier, M. Troudi, A. Kalboussi, N. Baboux, A. Souifi. mj, 38(8-9):894-899, 2007. [doi]

Analysis of slow traps centres in submicron MOSFETs by random telegraph signal techniqueN. Sghaier, L. Militaru, M. Trabelsi, N. Yacoubi, A. Souifi. mj, 38(4-5):610-614, 2007. [doi]

Macro-modeling for the compact simulation of single electron transistor using SIMPLORERM. Troudi, N. Sghaier, A. Boubaker, A. Souifi, A. Kalboussi. mj, 38(12):1156-1160, 2007. [doi]

2006

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT s on silicon and sapphire substratesN. Sghaier, M. Trabelsi, N. Yacoubi, J. M. Bluet, A. Souifi, G. Guillot, C. Gaquière, J. C. DeJaeger. mj, 37(4):363-370, 2006. [doi]

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