Journal: IEICE Electronic Express

Volume 22, Issue 7

20240601 -- 0Rongfeng Li, Xueming Li, Chaoming Yang, Xianghong Hu, Yuanmiao Lin, Shansen Fu, Hongmin Huang, Shuting Cai, Xiaoming Xiong. A precision-scalable sparse CNN accelerator with fine-grained mixed bitwidth configurability
20240710 -- 0Rui Hua, Jianhua Zhang, Aiying Guo. Design of a 25 Gbps CTLE based on adjustable mid-frequency equalization and wide-bandwidth binaural negative capacitor
20240732 -- 0Yijin Shang, Jianjun Song, ShiQi Zhang. A composite strain GeOI PMOSFET for 2.45G weak energy rectification
20250005 -- 0Junqi Liu, Menglian Zhao, Zhaonan Lu, Lingxin Meng, Zhichao Tan. μW 13 bit self-timed incremental NC-SMASH ADC with SAR-logic-based integrator
20250028 -- 0ZhenJie Yan, Binhan Zhang, Rui Yang, Yi Zheng, Jinghu Li, Zhicong Luo, Qiyan Sun. A 1.2-V compact bandgap reference with curvature compensation technology
20250038 -- 0Longyan Zhao, Chengkui Jia, Sheng Xie, Luhong Mao, Naibo Zhang, Ruiliang Song. μm SiGe BiCMOS
20250042 -- 0Young Eun Choi, Woo Seok Kim, Myoung Kim, Min-Woo Ryu, Kyung Rok Kim. Ultra-low power and 1.5 bit/cell ternary-SRAM stability modeling for always-on applications
20250046 -- 0Conggui Huang 0001. aq-based switching scheme with bottom-plate sampling for SAR ADCs
20250050 -- 0Nannan Sun, Kai Huang, Mingyang Sun, Jing Zhang, Zhenjiang Gao, Chuman Cui, Tianyang Wang. A SiC MOSFET low switching loss strategy based on a reverse conduction
20250095 -- 0Yutong Liu, Hao Li, Guanning Wang, Tuming Zhang, Yuxiang Feng, Qing Hua. A smart monolithic integrated IGBT gate driver IC for inverter and PFC applications