Journal: IEICE Transactions

Volume 100-C, Issue 3

221 -- 222Fumio Arakawa, Makoto Ikeda. Foreword
223 -- 231Shuping Zhang, Jinjia Zhou, Dajiang Zhou, Shinji Kimura, Satoshi Goto. A 7-Die 3D Stacked 3840×2160@120 fps Motion Estimation Processor
232 -- 244Junji Yamada, Ushio Jimbo, Ryota Shioya, Masahiro Goshima, Shuichi Sakai. Design of a Register Cache System with an Open Source Process Design Kit for 45nm Technology
245 -- 258Ushio Jimbo, Junji Yamada, Ryota Shioya, Masahiro Goshima. Applying Razor Flip-Flops to SRAM Read Circuits
259 -- 267Aravind Tharayil Narayanan, Wei Deng, Dongsheng Yang, Rui Wu, Kenichi Okada, Akira Matsuzawa. A Fully-Synthesizable 10.06Gbps 16.1mW Injection-Locked CDR in 28nm FDSOI
268 -- 0Keiji Tsukada. Foreword
269 -- 273Saburo Tanaka, Takeyoshi Ohtani, Hans-Joachim Krause. Prototype of Multi-Channel High-Tc SQUID Metallic Contaminant Detector for Large Sized Packaged Food
274 -- 282Taro Yamashita, Shigehito Miki, Hirotaka Terai. Recent Progress and Application of Superconducting Nanowire Single-Photon Detectors
283 -- 290Masashi Ohno, Tomoya Irimatsugawa, Hiroyuki Takahashi, Chiko Otani, Takashi Yasumune, Koji Takasaki, Chikara Ito, Takashi Ohnishi, Shinichi Koyama, Shuichi Hatakeyama, R. M. Thushara Damayanthi. Superconducting Transition Edge Sensor for Gamma-Ray Spectroscopy
291 -- 297Mizuki Ikeya, Takashi Noguchi, Takafumi Kojima, Takeshi Sakai. Low Leakage Current Nb-Based Tunnel Junctions with an Extra Top Al Layer
298 -- 304Hiroki Watanabe, Satoru Mima, Shugo Oguri, Mitsuhiro Yoshida, Masashi Hazumi, Hirokazu Ishino, Hikaru Ishitsuka, Atsuko Kibayashi, Chiko Otani, Nobuaki Sato, Osamu Tajima, Nozomu Tomita. Development of an Optical Coupling with Ground-Side Absorption for Antenna-Coupled Kinetic Inductance Detectors
305 -- 312Takashi Hisakado, Keisuke Yoshida, Tohlu Matsushima, Osami Wada. Equivalent-Circuit Model for Meta-Atoms Consisting of Wired Metallic Spheres
313 -- 320Majid Delshad, Mahmood Vesali. A New Nonisolated ZVS Bidirectional Converter with Minimum Auxiliary Elements
321 -- 328Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch. Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications
329 -- 339Yoshiaki Asao, Fumio Horiguchi. A Comprehensive Model for Write Disturbance in Resistive Memory Composed of Cross-Point Array
340 -- 343Duksoo Kim, Byungjoon Kim, Sangwook Nam. A Wideband Noise-Cancelling Receiver Front-End Using a Linearized Transconductor
344 -- 347Yuan Wang, Guangyi Lu, Yize Wang, Xing Zhang. Power-Rail ESD Clamp Circuit with Parasitic-BJT and Channel Parallel Shunt Paths to Achieve Enhanced Robustness