Journal: IEICE Transactions

Volume 95-C, Issue 8

1309 -- 0Tamotsu Hashizume. Foreword
1310 -- 1316Kenji Kurishima, Minoru Ida, Norihide Kashio, Yoshino K. Fukai. N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
1317 -- 1322Kimikazu Sano, Munehiko Nagatani, Miwa Mutoh, Koichi Murata. High ESD Breakdown-Voltage InP HBT Transimpedance Amplifier IC for Optical Video Distribution Systems
1323 -- 1326Yutaro Yamaguchi, Takeshi Sagai, Yasuyuki Miyamoto. Fabrication of InP/InGaAs SHBT on Si Substrate by Using Transferred Substrate Process
1327 -- 1331Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka. K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W
1332 -- 1336Maiko Hatano, Norimasa Yafune, Hirokuni Tokuda, Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita, Masaaki Kuzuhara. Superior DC and RF Performance of AlGaN-Channel HEMT at High Temperatures
1337 -- 1342Eiji Miyazaki, Shigeru Kishimoto, Takashi Mizutani. 2S Surface Treatment for AlGaN/GaN MOSHFETs
1343 -- 1347Tadayoshi Deguchi, Hideshi Tomita, Atsushi Kamada, Manabu Arai, Kimiyoshi Yamasaki, Takashi Egawa. Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure
1348 -- 1353Chong Jin, Dimitris Pavlidis, Laurence Considine. DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
1354 -- 1362Masayuki Abe, Noriaki Kogushi, Kian Siong Ang, René Hofstetter, Kumar Manoj, Louis Nicholas Retnam, Hong Wang, Geok Ing Ng, Chong Jin, Dimitris Pavlidis. High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
1363 -- 1368Arnaud Stolz, Laurence Considine, Elhadj Dogheche, Didier Decoster, Dimitris Pavlidis. Prospective for Gallium Nitride-Based Optical Waveguide Modulators
1369 -- 1375Kai Blekker, Rene Richter, Ryosuke Oda, Satoshi Taniyama, Oliver Benner, Gregor Keller, Benjamin Munstermann, Andrey Lysov, Ingo Regolin, Takao Waho, Werner Prost. InAs Nanowire Circuits Fabricated by Field-Assisted Self-Assembly on a Host Substrate
1376 -- 1384Kiyoto Asakawa, Yosuke Itagaki, Hideaki Shin-Ya, Mitsufumi Saito, Michihiko Suhara. Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna
1385 -- 1388Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa. Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs
1389 -- 1398Ken Akune, Shouhei Kidera, Tetsuo Kirimoto. Accurate and Nonparametric Imaging Algorithm for Targets Buried in Dielectric Medium for UWB Radars
1399 -- 1405Ryosuke Hasaba, Makoto Ando. Hybrid Analysis of Radar Cross Section of Open-Ended Cavity Scatterers by Using Modified Physical Optics and Iterative Physical Optics
1406 -- 1414Chul Bum Kim, Doo Hyung Woo, Hee Chul Lee. Design of a Readout Circuit for Improving the SNR of Satellite Infrared Time Delay and Integration Arrays
1415 -- 1426Yuli Zhang, Jun Han, Xinqian Weng, Zhongzhu He, Xiaoyang Zeng. Design Approach and Implementation of Application Specific Instruction Set Processor for SHA-3 BLAKE Algorithm
1427 -- 1433Daisuke Kanemoto, Toru Ido, Kenji Taniguchi 0001. A High Dynamic Range and Low Power Consumption Audio Delta-Sigma Modulator with Opamp Sharing Technique among Three Integrators
1434 -- 1443Zhengfan Xia, Shota Ishihara, Masanori Hariyama, Michitaka Kameyama. Design of High-Performance Asynchronous Pipeline Using Synchronizing Logic Gates
1444 -- 1446Minoru Yamada, Itaru Tera, Kenjiro Matsuoka, Takuya Hama, Yuji Kuwamura. Reduction of Intensity Noise in Semiconductor Lasers by Simultaneous Usage of the Superposition of High Frequency Current and the Electric Negative Feedback
1447 -- 1448Ki-Sung Sohn, Da-In Han, Ki-Ju Baek, Nam Soo Kim, Yeong-Seuk Kim. Low Power Clock Gating for Shift Register