Yutaro Yamaguchi 0002, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi. Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 48-51, IEEE, 2018. [doi]
@inproceedings{0002OHSO18,
title = {Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters Measurement},
author = {Yutaro Yamaguchi 0002 and Tomohiro Otsuka and Masatake Hangai and Shintaro Shinjo and Toshiyuki Oishi},
year = {2018},
doi = {10.1109/BCICTS.2018.8551150},
url = {https://doi.org/10.1109/BCICTS.2018.8551150},
researchr = {https://researchr.org/publication/0002OHSO18},
cites = {0},
citedby = {0},
pages = {48-51},
booktitle = {2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018},
publisher = {IEEE},
isbn = {978-1-5386-6502-2},
}