Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation - researchr publication authors

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Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi. Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectronics Reliability, 88:941-945, 2018. [doi]

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